Monolithic Pixel Sensors in Deep-Submicron SOI Technology

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed.Comment: Proceedings of the PIXEL 2008 International Workshop, FNAL, Batavia, IL, 23-26 September 2008. Submitted to JINST - Journal of Instrumentatio

A low-power, radiation-hard gigabit serializer for use in the CMS electromagnetic calorimeter

An integrated fiber-optic bit serializer and VCSEL driver has been constructed in radiation-hard complementary heterostructure GaAs FET (CHFET) technology. The serializer, which converts 20 parallel inputs into a high-speed serial output, consumes 60 mW at nominal supply voltage when operating at the Large Hadron Collider word rate of 40 MHz (0.8-GB/s serial rate). The integrated driver directly drives a VCSEL and provides 10-mA switched current and 5 mA of prebias. The complete digital optical link thus consumes 90 mW. (6 refs)

Light-to-light readout system of the CMS electromagnetic calorimeter

For the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC) at CERN, an 80,000-crystal electromagnetic calorimeter will measure electron and photon energies with high precision over a dynamic range of roughly 16 bits. The readout electronics will be located directly behind the crystals, and must survive a total dose of up to 2×104 Gy along with 5×1013 n/cm 2. A readout chain consisting of a custom wide-range acquisition circuit, commercial ADC and custom optical link for each crystal is presently under construction. An overview of the design is presented, with emphasis on the large-scale fiber communication syste

Cross-linguistic study of vocal pathology: perceptual features of spasmodic dysphonia in French-speaking subjects

Clinical characterisation of Spasmodic Dysphonia of the adductor type (SD) in French speakers by Klap and colleagues (1993) appears to differ from that of SD in English. This perceptual analysis aims to describe the phonetic features of French SD. A video of 6 French speakers with SD supplied by Klap and colleagues was analysed for frequency of phonatory breaks, pitch breaks, harshness, creak, breathiness and falsetto voice, rate of production, and quantity of speech output. In contrast to English SD, the French speaking SD patients demonstrated no evidence pitch breaks, but phonatory breaks, harshness and breathiness were prominent features. This verifies the French authors’ (1993) clinical description. These findings suggest that phonetic properties of a specific language may affect the manifestation of pathology in neurogenic voice disorders

Reversible Aphasia in Adolescence: A Late-Onset form of Landau Kleffner Syndrome? Report of a Single Case

An adolescent boy developed a long-lasting pattern of global aphasia, concomitant to focal (left temporal) EEG abnormalities; this was followed by complete recovery. Laboratory and neuroimaging studies were within normal limits. The possibility of a late-onset Landau Kleffner syndrome is discussed

The Effects of Blast Exposure on Protein Deimination in the Brain

Oxidative stress and calcium excitotoxicity are hallmarks of traumatic brain injury (TBI). While these early disruptions may be corrected over a relatively short period of time, long-lasting consequences of TBI including impaired cognition and mood imbalances can persist for years, even in the absence of any evidence of overt injury based on neuroimaging. This investigation examined the possibility that disordered protein deimination occurs as a result of TBI and may thus contribute to the long-term pathologies of TBI. Protein deimination is a calcium-activated, posttranslational modification implicated in the autoimmune diseases rheumatoid arthritis and multiple sclerosis, where aberrant deimination creates antigenic epitopes that elicit an autoimmune attack. The present study utilized proteomic analyses to show that blast TBI alters the deimination status of proteins in the porcine cerebral cortex. The affected proteins represent a small subset of the entire brain proteome and include glial fibrillary acidic protein and vimentin, proteins reported to be involved in autoimmune-based pathologies. The data also indicate that blast injury is associated with an increase in immunoglobulins in the brain, possibly representing autoantibodies directed against novel protein epitopes. These findings indicate that aberrant protein deimination is a biomarker for blast TBI and may therefore underlie chronic neuropathologies of head injury

港珠澳大橋-香港口岸國際概念設計大賽參賽作品

這是一個港澳珠跨海大橋香港口岸的概念設計，基地位於比鄰香港國際機場的填海人工島上，四下空曠，因為地處飛機起落的航線上，它有嚴格的高度限制。我們的初衷是創造一個地標光塔，它光彩斑斕、形態舞動，無論從陸地還是海上，空中還是山上，看上去它都會成為一個令人過目難忘的香港門戶。This entry to the Hong Kong Boundary Crossing Facilities (HKBCF) International Design Ideas Competition proposes an iconic beacon of dazzling light, colour and geometrical dynamics, visible as a gateway to Hong Kong, from the approach of both directions of the HKZM Bridge, from the air along the flight paths to HK airport, and the hills of Lantau Island and the New Territories.published_or_final_versio

Total dose effects on deep-submicron SOI technology for Monolithic Pixel Sensor development

We developed and characterized Monolithic pixel detectors in deep-submicron Fully Depleted (FD) Silicon On Insulator (SOI) technology. This paper presents the first studies of total dose effects from ionizing radiation performed on single transistor test structures. This work shows how the substrate bias condition during irradiation heavily affects the resulting radiation damage